Monolithic MEMS Resonator Based Pressure Sensor and Readout Design

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chuang, Po-Chun	en_US
dc.contributor.author	Wen, Kuei-Ann	en_US
dc.date.accessioned	2017-04-21T06:49:19Z	-
dc.date.available	2017-04-21T06:49:19Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-3219-8	en_US
dc.identifier.issn	2163-9612	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134583	-
dc.description.abstract	A monolithic MEMS resonator based pressure sensor and monolithically integrated with TIA (trans-impedance amplifier) readout circuitry has been fabricated in standard 1p6m AISC process. Dependence of the quality factor and ambient pressures are well known to resonator designers and it will be feasible to integrate a quality factor readout circuitry to detect ambient pressure. By measuring the sample resonator, the air pressure changes from 100 Pa to 1600 Pa, the Q factor will change from 2566 to 452 with resonant frequency in 15.4 k Hz and the readout circuit is designed accordingly. The system power consumption is 332.82 mu W with 1.8 V power supply and sensitivity is 0.0203 mV per Q.	en_US
dc.language.iso	en_US	en_US
dc.subject	AISC/MEMS process	en_US
dc.subject	pressure sensor	en_US
dc.subject	resonator	en_US
dc.subject	TIA	en_US
dc.title	Monolithic MEMS Resonator Based Pressure Sensor and Readout Design	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC)	en_US
dc.citation.spage	17	en_US
dc.citation.epage	18	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000392251200009	en_US
dc.citation.woscount	0	en_US
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