完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Shen, Yu-An | en_US |
dc.contributor.author | Chen, Chih | en_US |
dc.date.accessioned | 2017-04-21T06:49:18Z | - |
dc.date.available | 2017-04-21T06:49:18Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.isbn | 978-1-5090-4769-7 | en_US |
dc.identifier.issn | 2150-5934 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/134596 | - |
dc.description.abstract | Sn grain orientation that has highly anisotropic diffusivities plays a very important role on thermal-cycling test and electromigration failure. In this study, Cu/Sn-2.3Ag/Cu microbumps, assembled by thermal-compression bonding, after electromigration test are investigated grain orientation by electron-backscattering diffraction (EBSD). The condition of electromigration test is under the current density of 4x104 A/cm2 and 165 degrees C. In the results, The IMC growth at the interface of Cu/solder is very serious as the electron flow along a low alpha-angle grain as Very serious as that along a high alpha-angle grain. Therefore, we demonstrate IMC formations depend on the angle between c-axis and electron flow in Sn grains. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effect of Sn Grain Orientation on the Formation of Cu6Sn5 Intermetallic Compounds during Electromigration | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2016 11TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT-IAAC 2016) | en_US |
dc.citation.spage | 85 | en_US |
dc.citation.epage | 86 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000391819600014 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |