完整後設資料紀錄
DC 欄位語言
dc.contributor.authorShen, Yu-Anen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2017-04-21T06:49:18Z-
dc.date.available2017-04-21T06:49:18Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-4769-7en_US
dc.identifier.issn2150-5934en_US
dc.identifier.urihttp://hdl.handle.net/11536/134596-
dc.description.abstractSn grain orientation that has highly anisotropic diffusivities plays a very important role on thermal-cycling test and electromigration failure. In this study, Cu/Sn-2.3Ag/Cu microbumps, assembled by thermal-compression bonding, after electromigration test are investigated grain orientation by electron-backscattering diffraction (EBSD). The condition of electromigration test is under the current density of 4x104 A/cm2 and 165 degrees C. In the results, The IMC growth at the interface of Cu/solder is very serious as the electron flow along a low alpha-angle grain as Very serious as that along a high alpha-angle grain. Therefore, we demonstrate IMC formations depend on the angle between c-axis and electron flow in Sn grains.en_US
dc.language.isoen_USen_US
dc.titleEffect of Sn Grain Orientation on the Formation of Cu6Sn5 Intermetallic Compounds during Electromigrationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 11TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT-IAAC 2016)en_US
dc.citation.spage85en_US
dc.citation.epage86en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000391819600014en_US
dc.citation.woscount0en_US
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