標題: Investigation of Microwave Assisted Annealing on AP-PECVD Fabricated In-Ga-Zn-O Thin Film Transistors under Positive Bias Temperature Stress
作者: Wu, Chien-Hung
Huang, Bo-Wen
Chang, Kow-Ming
Cheng, Chia-Yao
Chen, Hsin-Ying
Lee, Yao-Jen
Lin, Jian-Hong
Hsu, Jui-Mei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Microwave assisted annealing (MWAA);atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD);atmospheric pressure indium-gallium-zinc oxide thin-film transistors (AP-IGZO TFTs);positive bias temperature instability (PBTI)
公開日期: 2016
摘要: In this paper, microwave assisted annealing (MWAA) technique on atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) fabricated indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) is investigated for the first time. MWAA with 300W for 100sec treatment on AP-IGZO TFTs have been fabricated successfully and show excellent electrical characteristics including a VTH of -1.23 V, SS of 0.18 V/dec, mu FE of 17.4 cm2/V-s, and Ion/Ioff ratio of 8.14 106. Stretched exponential time dependence model is used to analyze the mechanism of AP-IGZO TFTs under PBTI stress. Accordingly, chemisorption model for oxygen adsorption at AP-IGZO backchannel with and without MWAA is proposed to explain the mechanism under PBTI stress.
URI: http://hdl.handle.net/11536/134638
ISBN: 978-1-5090-1493-4
期刊: 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
起始頁: 176
結束頁: 179
Appears in Collections:Conferences Paper