標題: Investigation of Abnormal Off-Current in p-Channel Double Diffused Drain Metal-Oxide-Semiconductor Transistors after Hot Carrier Stress
作者: Chen, Ching-En
Chang, Ting-Chang
Lu, Ying-Hsin
Chen, Hua-Mao
Chen, Bo-Wei
Pan, Chih-Hung
Hung, Yu-Ju
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2016
摘要: This paper studies the degradation behaviors in IV characteristics and the corresponding improvement for p-channel double diffused drain metal-oxide-semiconductor (DDDMOS) transistors after hot carrier stress (HCS). There is an apparent current which is flowed from source to drain in the off-region after HCS. According to the IV characteristic comparisons between different device structures and ISE-TCAD simulation results, the location and mechanism of this abnormal off-current can be demonstrated. Furthermore, this off-current is suppressed effectively by the different process flows in STI fabrication for this DDDMOS device.
URI: http://hdl.handle.net/11536/134642
ISBN: 978-1-5090-1493-4
期刊: 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
起始頁: 777
結束頁: 779
Appears in Collections:Conferences Paper