標題: Identical Off-state Current Raise Induced by Photo-induced Schottky Barrier Lowering in a-InGaZnO4 Thin Film Transistors
作者: Chen, Hua-Mao
Chang, Ting-Chang
Liao, Po-Yung
Chiang, Hsiao-Cheng
Chen, Ching-En
Chen, Bo-Wei
Pan, Chih-Hung
Hung, Yu-Ju
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: UV light;IGZO;depletion length;photo current
公開日期: 2016
摘要: This work studies the mechanism of identical photoinduced leakage current in a-InGaZnO4 thin film transistors during reverse gate voltage sweep. There is the identical off-state current with the reverse sweep under UV light irradiation, and the photocurrent for UV light exposure region near the source electrode is more significant than that near the drain electrode, which is different from photocurrent mechanism of low temperature polysilicon TFTs. This is because the photo-generated electrons increase the carrier concentration in a-InGaZnO4 bulk, causing the reduced depletion width of the active layer. Therefore, the back channel of active layer is out of gate control.
URI: http://hdl.handle.net/11536/134643
ISBN: 978-1-5090-1493-4
期刊: 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
起始頁: 783
結束頁: 786
Appears in Collections:Conferences Paper