Enhancement-mode AlGaN/GaN MIS-HEMTs with Low Threshold Voltage Hysteresis Using Damage-free Neutral Beam Etched Gate Recess

標題:	Enhancement-mode AlGaN/GaN MIS-HEMTs with Low Threshold Voltage Hysteresis Using Damage-free Neutral Beam Etched Gate Recess
作者:	Lin, Yen-Ku Noda, Shuichi Lee, Ruey-Bor Huang, Chia-Ching Quang Ho Luc Samukawa, Seiji Chang, Edward Yi 材料科學與工程學系光電系統研究所影像與生醫光電研究所電子工程學系及電子研究所 Department of Materials Science and Engineering Institute of Photonic System Institute of Imaging and Biomedical Photonics Department of Electronics Engineering and Institute of Electronics
公開日期:	2016
摘要:	An enhancement- mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched (NBE) gate recess is reported. The NBE can eliminate the plasma-induced defects that generated by irradiating UV/VUV photons as encounted in the conventional inductively coupled plasma-reactive-ion etching (ICP-RIE). Combining the new gate recess process and PEALD-AlN interfacial passivation layer, the Al2O3/AlGaN/GaN enhancement- mode HEMT device shows a threshold voltage of 1.5 V and a current density of 449 mA/mm, and the three-terminal breakdown voltage was 432 V. The device also shows small hysteresis in threshold voltage at stable I-V curve.
URI:	http://hdl.handle.net/11536/134644
ISBN:	978-1-5090-1493-4
期刊:	2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
起始頁:	799
結束頁:	801
Appears in Collections:	Conferences Paper