標題: | Growth of atomic-scale aluminum film on GaAs substrate |
作者: | Lo, Ming-Cheng Fan, Yen-Ting Wu, Chu-Chun Chen, Peng-Yu Lin, Sheng-Di 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2016 |
摘要: | We present the method for large-area growth of single-crystalline Al films in atomic scale on GaAs substrate by using molecular beam epitaxy. The grown Al film of thickness down to 5 nm exhibits smooth surface morphology, a clear and single X-ray diffraction peak in. theta-2 theta scan, and nearly transparent optical response. This work open a window for ex-situ studying quantum size effect in metal film. |
URI: | http://hdl.handle.net/11536/134648 |
ISBN: | 978-1-5090-1493-4 |
期刊: | 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) |
起始頁: | 868 |
結束頁: | 870 |
顯示於類別: | 會議論文 |