標題: Growth of atomic-scale aluminum film on GaAs substrate
作者: Lo, Ming-Cheng
Fan, Yen-Ting
Wu, Chu-Chun
Chen, Peng-Yu
Lin, Sheng-Di
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2016
摘要: We present the method for large-area growth of single-crystalline Al films in atomic scale on GaAs substrate by using molecular beam epitaxy. The grown Al film of thickness down to 5 nm exhibits smooth surface morphology, a clear and single X-ray diffraction peak in. theta-2 theta scan, and nearly transparent optical response. This work open a window for ex-situ studying quantum size effect in metal film.
URI: http://hdl.handle.net/11536/134648
ISBN: 978-1-5090-1493-4
期刊: 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
起始頁: 868
結束頁: 870
顯示於類別:會議論文