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dc.contributor.authorTsai, Yi-Chiaen_US
dc.contributor.authorLee, Ming-Yien_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorSamukawa, Seijien_US
dc.date.accessioned2017-04-21T06:48:52Z-
dc.date.available2017-04-21T06:48:52Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-1493-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/134649-
dc.description.abstractThis article presents a computational study on the impact of layer distance on the miniband formulation and density of state under different quantum dot structural parameters-height, interdot space-in a bilayer and well-aligned Ge/Si quantum-dot array. The miniband bandwidth, energy and effective bandgap is tunable by introducing an additional quantum dot layer. When the vertical distance between layers is smaller than 2.0 nm, the individual band structure of each layer will separate and couple into a broader bandwidth. The effective bandgap decreases since the highest excited states, with broader bandwidth, mix with and become continuous energy levels.en_US
dc.language.isoen_USen_US
dc.titleMiniband Formulation of Bilayer Type II Ge/Si Quantum Dot Superlatticesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)en_US
dc.citation.spage891en_US
dc.citation.epage894en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000391840000254en_US
dc.citation.woscount0en_US
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