標題: | Miniband formulation in Ge/Si quantum dot array |
作者: | Tsai, Yi-Chia Lee, Ming-Yi Li, Yiming Samukawa, Seiji 電信工程研究所 Institute of Communications Engineering |
公開日期: | 四月-2016 |
摘要: | In this work, we estimate the coupling effect of miniband structure and density of states (DoS) resulting from different qunatum-dot physical parameters in a well-aligned Ge/Si quantum dot (QD) array fabricated by neutral beam etching technology. The density of QDs dominates the coupling effect and miniband\'s bandwidth, the radius of QDs affects the magnitude of energy levels and miniband bandwidth, and the thickness of QDs has a great impact on the magnitude of energy levels. Among the different shapes of Ge/Si QDs, discoid QDs exhibit the most band crossing and broadest bandwith under the same physical parameters. (C) 2016 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/JJAP.55.04EJ14 http://hdl.handle.net/11536/135201 |
ISSN: | 0021-4922 |
DOI: | 10.7567/JJAP.55.04EJ14 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 55 |
Issue: | 4 |
顯示於類別: | 會議論文 |