標題: Miniband formulation in Ge/Si quantum dot array
作者: Tsai, Yi-Chia
Lee, Ming-Yi
Li, Yiming
Samukawa, Seiji
電信工程研究所
Institute of Communications Engineering
公開日期: 1-四月-2016
摘要: In this work, we estimate the coupling effect of miniband structure and density of states (DoS) resulting from different qunatum-dot physical parameters in a well-aligned Ge/Si quantum dot (QD) array fabricated by neutral beam etching technology. The density of QDs dominates the coupling effect and miniband's bandwidth, the radius of QDs affects the magnitude of energy levels and miniband bandwidth, and the thickness of QDs has a great impact on the magnitude of energy levels. Among the different shapes of Ge/Si QDs, discoid QDs exhibit the most band crossing and broadest bandwith under the same physical parameters. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.55.04EJ14
http://hdl.handle.net/11536/145339
ISSN: 0021-4922
DOI: 10.7567/JJAP.55.04EJ14
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 55
顯示於類別:期刊論文