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dc.contributor.authorTsai, Yi-Chiaen_US
dc.contributor.authorLee, Ming-Yien_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorSamukawa, Seijien_US
dc.date.accessioned2018-08-21T05:53:55Z-
dc.date.available2018-08-21T05:53:55Z-
dc.date.issued2016-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.55.04EJ14en_US
dc.identifier.urihttp://hdl.handle.net/11536/145339-
dc.description.abstractIn this work, we estimate the coupling effect of miniband structure and density of states (DoS) resulting from different qunatum-dot physical parameters in a well-aligned Ge/Si quantum dot (QD) array fabricated by neutral beam etching technology. The density of QDs dominates the coupling effect and miniband's bandwidth, the radius of QDs affects the magnitude of energy levels and miniband bandwidth, and the thickness of QDs has a great impact on the magnitude of energy levels. Among the different shapes of Ge/Si QDs, discoid QDs exhibit the most band crossing and broadest bandwith under the same physical parameters. (C) 2016 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleMiniband formulation in Ge/Si quantum dot arrayen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.55.04EJ14en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume55en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000373929400119en_US
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