Heterogeneously Integrated InP Based 14,vanescentlyCoupled High-Speed and High-Power p-i-n Photodiodes on Silicon-on-Insulator (SOI) Substrate

Abstract

we demonstrate InP based evanescently-coupled pi-n photodiodes heterogeneously integrated onto silicon-on insulator substrate. Using advanced waveguide structures and fabrication processes, it simultaneously achieves 67 GHz O-E bandwidth (RC-free), broad optical window (1520-1600nm) with 0.5 A/W internal responsivity, and high saturation currents (9 mA at 70 GHz).