Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ho, Yen-Teng	en_US
dc.contributor.author	Chu, Yung-Ching	en_US
dc.contributor.author	Jong, Chao An	en_US
dc.contributor.author	Chen, Hung-Yi	en_US
dc.contributor.author	Lin, Meng-Wei	en_US
dc.contributor.author	Zhang, Ming	en_US
dc.contributor.author	Chien, Po-Yen	en_US
dc.contributor.author	Tu, Yung-Yi	en_US
dc.contributor.author	Woo, Jason	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.date.accessioned	2017-04-21T06:48:46Z	-
dc.date.available	2017-04-21T06:48:46Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-5090-0726-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134673	-
dc.description.abstract	The effect of resistance (Rc) reduction of Ti/Au contact on MoS2 by ICP Ar plasma pretreatment is presented. The lowest Rc of 1.72 ohm-cm was achieved with the ICP treatment condition of 50W (ICP) /2W (chuck) for 10 sec. Compared with the contact without treatment (19.6 ohm-cm), the Rc improves over 10 times, demonstrating the advantage of Ar plasma pre-treatment on MoS2 contact.	en_US
dc.language.iso	en_US	en_US
dc.title	Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)	en_US
dc.citation.spage	52	en_US
dc.citation.epage	53	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000391250500022	en_US
dc.citation.woscount	0	en_US
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