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dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorChu, Yung-Chingen_US
dc.contributor.authorJong, Chao Anen_US
dc.contributor.authorChen, Hung-Yien_US
dc.contributor.authorLin, Meng-Weien_US
dc.contributor.authorZhang, Mingen_US
dc.contributor.authorChien, Po-Yenen_US
dc.contributor.authorTu, Yung-Yien_US
dc.contributor.authorWoo, Jasonen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2017-04-21T06:48:46Z-
dc.date.available2017-04-21T06:48:46Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-5090-0726-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/134673-
dc.description.abstractThe effect of resistance (Rc) reduction of Ti/Au contact on MoS2 by ICP Ar plasma pretreatment is presented. The lowest Rc of 1.72 ohm-cm was achieved with the ICP treatment condition of 50W (ICP) /2W (chuck) for 10 sec. Compared with the contact without treatment (19.6 ohm-cm), the Rc improves over 10 times, demonstrating the advantage of Ar plasma pre-treatment on MoS2 contact.en_US
dc.language.isoen_USen_US
dc.titleContact resistance reduction on layered MoS2 by Ar plasma pre-treatmenten_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)en_US
dc.citation.spage52en_US
dc.citation.epage53en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000391250500022en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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