Reliable Doping Technique for WSe2 by W: Ta Co-Sputtering Process

Title:	Reliable Doping Technique for WSe2 by W: Ta Co-Sputtering Process
Authors:	Chien, Po-Yen Zhang, Ming Huang, Shao-Chia Lee, Min-Hung Hsu, Hung-Ru Ho, Yen-Teng Chu, Yung-Ching Jong, Chao-An Woo, Jason 材料科學與工程學系 Department of Materials Science and Engineering
Issue Date:	2016
Abstract:	The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6x10(13)cm(-2)) and good effective hole mobility (16.5cm(2)/Vs) were realized. As a result, low sheet resistance (17k Omega/sq) and contact resistance with Pd metal (11.4k Omega-mu m) were measured using TLM structures.
URI:	http://hdl.handle.net/11536/134675
ISBN:	978-1-5090-0726-4
Journal:	2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
Begin Page:	58
End Page:	59
Appears in Collections:	Conferences Paper