標題: Reliable Doping Technique for WSe2 by W: Ta Co-Sputtering Process
作者: Chien, Po-Yen
Zhang, Ming
Huang, Shao-Chia
Lee, Min-Hung
Hsu, Hung-Ru
Ho, Yen-Teng
Chu, Yung-Ching
Jong, Chao-An
Woo, Jason
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2016
摘要: The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6x10(13)cm(-2)) and good effective hole mobility (16.5cm(2)/Vs) were realized. As a result, low sheet resistance (17k Omega/sq) and contact resistance with Pd metal (11.4k Omega-mu m) were measured using TLM structures.
URI: http://hdl.handle.net/11536/134675
ISBN: 978-1-5090-0726-4
期刊: 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
起始頁: 58
結束頁: 59
顯示於類別:會議論文