Comprehensive Trap-Level Study in SiOx-based Resistive Switching Memory

Title:	Comprehensive Trap-Level Study in SiOx-based Resistive Switching Memory
Authors:	Chang, Yao-Feng Chen, Ying-Chen Li, Ji Xue, Fei Wang, Yanzhen Zhou, Fei Fowler, Burt Lee, Jack C. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	2013
URI:	http://hdl.handle.net/11536/134738
ISBN:	978-1-4799-0811-0 978-1-4799-0812-7
ISSN:	1548-3770
Journal:	2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC)
Begin Page:	135
End Page:	+
Appears in Collections:	Conferences Paper