Comprehensive Trap-Level Study in SiOx-based Resistive Switching Memory

標題:	Comprehensive Trap-Level Study in SiOx-based Resistive Switching Memory
作者:	Chang, Yao-Feng Chen, Ying-Chen Li, Ji Xue, Fei Wang, Yanzhen Zhou, Fei Fowler, Burt Lee, Jack C. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2013
URI:	http://hdl.handle.net/11536/134738
ISBN:	978-1-4799-0811-0 978-1-4799-0812-7
ISSN:	1548-3770
期刊:	2013 71ST ANNUAL DEVICE RESEARCH CONFERENCE (DRC)
起始頁:	135
結束頁:	+
顯示於類別：	會議論文