Mechanisms of p-GaAs(100) surface by atomic force microscope nano-oxidation

Abstract

Nanopattering using atomic force microscope (AFM) has become an important area of research, for both fundamental research and future nanodevice applications. Local oxidation of p-GaAs(l 00) surface by using a negatively biased conductive AFM tip is a universal method for this purpose. The dependences of the height, aspect ratio and volume on applied anodization times and voltages during which the anodization voltage is applied were studied. We explore the kinetics and mechanisms of the anodization process and how factors such as the electric field strength and the relative humidity influence its growth rate and the contribution of ionic diffusion. The results revealed that the protruding oxide dot's height, aspect ratio and volume increase during longer anodization time and at larger anodization voltage as well as in higher relative humidity conditions. The high initial growth rate (similar to 300 nm s(-1) for 10 V) decreases quickly with decreasing electric field strength and the oxide practically ceases to grow at an order of (2-3) x 107 V cm(-1). Auger electron spectroscopy measurements confirm that the modified structures take the form of anodized p-GaAs(I 00). Also, the contribution of ionic diffusion increases by about 80% at a higher relative humidity. In addition, the nanohardness of the oxide structures was measured with the aid of an AFM-based nanoindentation technique.