標題: Silicide Barrier Engineering Induced Random Telegraph Noise in 1Xnm CMOS Contacts
作者: Chen, Min-Cheng
Lin, Chia-Yi
Chen, Bo-Yuan
Lin, Chang-Hsien
Huang, Guo-Wei
Huang, Chien-Chao
Ho, ChiaHua
Wang, Tahui
Hu, Chenming
Yang, Fu-Liang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2011
摘要: For the first time, new random telegraph noise behaviors are reported for silicide band gap engineering in advanced nano CMOS technology. Noise current pulses of up to 40% magnitude are observed when Schottky barrier is reduced to 0.2eV. The large contact resistance instability is attributed to barrier modification at Schottky contact interface by positive charge trapping. The prevalence and magnitude of the noise are dependent on the contact size, trap density, trap energy and the silicide Schottky barrier height. In this work, we report a fast monitor methodology to identify the silicide process induced traps in small silicide contacts for 1Xnm CMOS technology.
URI: http://hdl.handle.net/11536/134816
ISBN: 978-1-4577-0505-2
期刊: 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
顯示於類別:會議論文