標題: Investigation of Single-Trap-Induced Random Telegraph Noise for Tunnel FET Based Devices, 8T SRAM Cell, and Sense Amplifiers
作者: Fan, Ming-Long
Hu, Vita Pi-Ho
Chen, Yin-Nien
Su, Pin
Chuang, Ching-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: FinFET;Random Telegraph Noise (RTN);Sense Amplifier;SRAM Cell;Tunnel FET (TFET)
公開日期: 2013
摘要: This paper analyzes the impacts of Random Telegraph Noise (RTN) caused by a single acceptor-type trap on Tunnel FET (TFET) based devices, 8T SRAM cell and sense amplifiers. 3D atomistic TCAD simulations accounting for the impact of localized/negatively-charged trap are utilized to assess the dependence of RTN amplitude (Delta I-D/I-D) on trap location and device geometry. Our results indicate that significant RTN impact occurs for trap located near the tunneling junction. The device design strategies (thinner EOT, W-fin and longer L-eff) to improve TFET device characteristics are found to increase the susceptibility to RTN. Furthermore, TFET-based standard 8T SRAM cell and several commonly used sense amplifiers including Current Latch Sense Amplifier (CLSA), Voltage Latch Sense Amplifier (VLSA), and single-ended large-signal inverter sense amplifier are examined using atomistic 3D TCAD mixed-mode simulations. The presence of RTN is shown to cause extra similar to 16% variations in cell stability (at V-dd = 0.3V) and additional similar to 80mV variation in offset voltage for sense amplifiers at V-dd = 0.5V.
URI: http://hdl.handle.net/11536/22641
ISBN: 978-1-4799-0113-5
ISSN: 1541-7026
期刊: 2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
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