Very High Performance Non-Volatile Memory on Flexible Plastic Substrate

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chou, K. Y.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.date.accessioned	2017-04-21T06:49:54Z	-
dc.date.available	2017-04-21T06:49:54Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-4244-7419-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134856	-
dc.description.abstract	We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 mu W switching power (1.6 mu A at 3 V; -0.5 nA at -2 V), excellent 10(5) cycling endurance, large on/off retention memory window > 10(2) even at 85 degrees C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.	en_US
dc.language.iso	en_US	en_US
dc.title	Very High Performance Non-Volatile Memory on Flexible Plastic Substrate	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000287997300132	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文