High Performance Ultra-Low Energy RRAM with Good Retention and Endurance

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Tsai, C. Y.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.date.accessioned	2017-04-21T06:49:53Z	-
dc.date.available	2017-04-21T06:49:53Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-4244-7419-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134858	-
dc.description.abstract	High performance novel RRAM of 0.3 mu W set power (0.1 mu A at 3 V), 0.6 nW reset power (-0.3 nA at -1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7x10(2) resistance window for 10(4) sec retention at 125 degrees C, and 10(6) cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.	en_US
dc.language.iso	en_US	en_US
dc.title	High Performance Ultra-Low Energy RRAM with Good Retention and Endurance	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000287997300116	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文