Novel Ultra-Low Power RRAM with Good Endurance and Retention

Full metadata record

DC Field	Value	Language
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.date.accessioned	2017-04-21T06:49:53Z	-
dc.date.available	2017-04-21T06:49:53Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-4244-7637-4	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/VLSIT.2010.5556180	en_US
dc.identifier.uri	http://hdl.handle.net/11536/134863	-
dc.description.abstract	We report high performance RRAM of ultra-low 4 mu W set power (-3.5 mu A at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4x10(5) at 85 degrees C, good 10(6) cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.	en_US
dc.language.iso	en_US	en_US
dc.title	Novel Ultra-Low Power RRAM with Good Endurance and Retention	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/VLSIT.2010.5556180	en_US
dc.identifier.journal	2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS	en_US
dc.citation.spage	85	en_US
dc.citation.epage	+	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000287495500029	en_US
dc.citation.woscount	31	en_US
Appears in Collections:	Conferences Paper