Full metadata record
DC FieldValueLanguage
dc.contributor.authorDu, Pei-Yingen_US
dc.contributor.authorLue, Hang-Tingen_US
dc.contributor.authorWang, Szu-Yuen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.contributor.authorHsieh, Kuang-Yeuen_US
dc.contributor.authorLiu, Richen_US
dc.contributor.authorLu, Chih-Yuanen_US
dc.date.accessioned2017-04-21T06:49:40Z-
dc.date.available2017-04-21T06:49:40Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-2888-5en_US
dc.identifier.urihttp://dx.doi.org/10.1109/IRPS.2009.5173266en_US
dc.identifier.urihttp://hdl.handle.net/11536/134942-
dc.description.abstractSONOS devices using gate injection programming and erasing have better cycling endurance because the gate oxide is not stressed by PIE operations. This work studies the gate injection behavior in detail using the recently developed gate-sensing and channel-sensing (GSCS) technique. GSCS accurately locates the charge centroid during programming/erasing and reliability tests. For the first time, we can track the charge centroid for gate-injection "top BE-SONOS" and various SONOS-type devices. Our results indicate that the charge centroid after electron gate injection is close to the nitride center, irrespective of various nitride thickness and top dielectric. Moreover, there is electron and hole vertical mismatch after hole gate injection. Comparing the results from SONS, we can clearly prove that electrons are mainly distributed inside the bulk nitride instead of the interfaces between oxide and nitride. For SNOS and SNS, where there is electron and hole injection simultaneously, two-region approximation can give us more detailed information about electron and hole capture. By comparing experimental data with theoretical modeling, we have shown that nitride 7nm or thicker captures all the injected electrons up to total charge area density similar to 10(13)cm(-2).en_US
dc.language.isoen_USen_US
dc.subjectcharge centroiden_US
dc.subjectcapture rateen_US
dc.subjectGSCSen_US
dc.subjectgate injectionen_US
dc.subjectSONOSen_US
dc.titleSTUDY OF GATE-INJECTION OPERATED SONOS-TYPE DEVICES USING THE GATE-SENSING AND CHANNEL-SENSING (GSCS) METHODen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/IRPS.2009.5173266en_US
dc.identifier.journal2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2en_US
dc.citation.spage288en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000272068100047en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper