標題: | A study of gate-sensing and channel-sensing (GSCS) transient analysis method - Part II: Study of the intra-nitride behaviors and reliability of SONOS-type devices |
作者: | Du, Pei-Ying Lue, Hang-Ting Wang, Szu-Yu Huang, Tiao-Yuan Hsieh, Kuang-Yeu Liu, Rich Lu, Chih-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | gate-sensing and channel-sensing (GSCS);GSCS method;intra-nitride charge transport;nitride trap vertical location;SONOS |
公開日期: | 1-八月-2008 |
摘要: | For the first time, we can directly investigate the charge transport and intra-nitride behaviors of SONOS-type devices by exploiting the gate-sensing and channel-sensing (GSCS) method. Our results clearly indicate that for electron injection (+FN program), the electron centroid migrates from the bottom toward the nitride center, whereas for hole injection (-FN erase), holes first recombine with the bottom electrons and then gradually move upward. For the electron de-trapping processes under -V(G) stressing, the trapped electrons de-trap first from the bottom portion of nitride. We also develop a method to distinguish the electron de-trapping and hole injection erasing methods by comparing the erasing current density (J) versus the bottom oxide electric field (E). At short-term high-temperature baking, the electrons move from the top portion toward the bottom portion, and this intra-nitride transport becomes more significant for a thicker nitride. On the other hand, after long-term baking, the charge loss mainly comes from the bottom portion of nitride. |
URI: | http://dx.doi.org/10.1109/TED.2008.925922 http://hdl.handle.net/11536/8497 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2008.925922 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 55 |
Issue: | 8 |
起始頁: | 2229 |
結束頁: | 2237 |
顯示於類別: | 期刊論文 |