標題: A study of gate-sensing and channel-sensing (GSCS) transient analysis method - Part II: Study of the intra-nitride behaviors and reliability of SONOS-type devices
作者: Du, Pei-Ying
Lue, Hang-Ting
Wang, Szu-Yu
Huang, Tiao-Yuan
Hsieh, Kuang-Yeu
Liu, Rich
Lu, Chih-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: gate-sensing and channel-sensing (GSCS);GSCS method;intra-nitride charge transport;nitride trap vertical location;SONOS
公開日期: 1-Aug-2008
摘要: For the first time, we can directly investigate the charge transport and intra-nitride behaviors of SONOS-type devices by exploiting the gate-sensing and channel-sensing (GSCS) method. Our results clearly indicate that for electron injection (+FN program), the electron centroid migrates from the bottom toward the nitride center, whereas for hole injection (-FN erase), holes first recombine with the bottom electrons and then gradually move upward. For the electron de-trapping processes under -V(G) stressing, the trapped electrons de-trap first from the bottom portion of nitride. We also develop a method to distinguish the electron de-trapping and hole injection erasing methods by comparing the erasing current density (J) versus the bottom oxide electric field (E). At short-term high-temperature baking, the electrons move from the top portion toward the bottom portion, and this intra-nitride transport becomes more significant for a thicker nitride. On the other hand, after long-term baking, the charge loss mainly comes from the bottom portion of nitride.
URI: http://dx.doi.org/10.1109/TED.2008.925922
http://hdl.handle.net/11536/8497
ISSN: 0018-9383
DOI: 10.1109/TED.2008.925922
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 55
Issue: 8
起始頁: 2229
結束頁: 2237
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