PD-SOI MOSFET Body-to-Body Leakage Scaling Trend and Optimization

doi:10.1109/SOI.2008.4656288

標題:	PD-SOI MOSFET Body-to-Body Leakage Scaling Trend and Optimization
作者:	Lo, H. C. Luo, W. C. Lu, W. Y. Cheng, C. F. Wu, Benny Chen, T. L. Lien, C. H. Fung, Samuel K. H. Tuan, H. C. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2008
摘要:	Body-to-Body leakage (BBL) in stacked transistor configuration has been characterized by different back gate biases (Vbg), SOI thicknesses, and poly spacings. BBL increases significantly from 65nm to 45nm node mainly due to smaller poly spacing and shallower S/D junctions. By implant optimization and reduction of the SOI thickness, BBL can be reduced below reverse junction leakage level.
URI:	http://dx.doi.org/10.1109/SOI.2008.4656288 http://hdl.handle.net/11536/135058
ISBN:	978-1-4244-1954-8
ISSN:	1078-621X
DOI:	10.1109/SOI.2008.4656288
期刊:	2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS
起始頁:	49
結束頁:	+
顯示於類別：	會議論文