標題: High-frequency performances of superjunction laterally diffused metal-oxide-semiconductor transistors for RF power applications
作者: Chen, Bo-Yuan
Chen, Kun-Ming
Chiu, Chia-Sung
Huang, Guo-Wei
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: Apr-2016
摘要: This paper presents the dc and high-frequency performances of laterally diffused metal-oxide-semiconductor (LDMOS) transistors with superjunction (SJ) structures. The SJ-LDMOS transistors were fabricated using a 0.5-mu m CMOS process. By utilizing a modified SJ/RESURF layout (Type I) or a tapered SJ layout (Type II) in our devices, better high-frequency performances and higher breakdown voltages are achieved compared with conventional SJ counterpart, owing to the suppression of the substrate-assisted depletion effect and the reduction of the drain resistance. For Type I device with an optimal SJ layout dimension, the cutoff frequency and the breakdown voltage are 3.7 GHz and 68 V, respectively. For Type II device with a smallest p-pillar width near the drain, they can be enhanced further and reach to 4.9 GHz and 83 V. These experimental results suggest that the SJ-LDMOS can be used in the RF power amplifiers. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.55.04ER09
http://hdl.handle.net/11536/135134
ISSN: 0021-4922
DOI: 10.7567/JJAP.55.04ER09
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 55
Issue: 4
Appears in Collections:Conferences Paper