Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs

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DC Field	Value	Language
dc.contributor.author	Wang, J. -S.	en_US
dc.contributor.author	Chen, William P. N.	en_US
dc.contributor.author	Shih, C. -H.	en_US
dc.contributor.author	Lien, C.	en_US
dc.contributor.author	Su, Pin	en_US
dc.contributor.author	Sheu, Y. M.	en_US
dc.contributor.author	Chao, Donald Y. -S.	en_US
dc.contributor.author	Goto, K.	en_US
dc.date.accessioned	2017-04-21T06:49:08Z	-
dc.date.available	2017-04-21T06:49:08Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-0584-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135150	-
dc.language.iso	en_US	en_US
dc.title	Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS	en_US
dc.citation.spage	158	en_US
dc.citation.epage	+	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000247059300072	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper