標題: | Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs |
作者: | Chen, William Po-Nien Su, Pin Goto, Ken-Ichi 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Coulomb mobility;MOSFET;strained silicon |
公開日期: | 1-九月-2008 |
摘要: | This paper provides an experimental assessment of Coulomb scattering mobility for advanced strained devices. By accurate short-channel mobility extraction, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel pMOSFETs. Our extracted Coulomb mobility shows very weak stress dependency at room temperature. This finding has also been verified in both long- and short-channel devices by the four-point wafer bending measurement. Therefore, in order to maximize the process-induced strain efficiency on nanoscale pMOSFETs, lower surface impurity concentration is suggested to avoid the Coulomb mobility domination in carrier transport. |
URI: | http://dx.doi.org/10.1109/TNANO.2008.2004771 http://hdl.handle.net/11536/8381 |
ISSN: | 1536-125X |
DOI: | 10.1109/TNANO.2008.2004771 |
期刊: | IEEE TRANSACTIONS ON NANOTECHNOLOGY |
Volume: | 7 |
Issue: | 5 |
起始頁: | 538 |
結束頁: | 543 |
顯示於類別: | 期刊論文 |