Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs

標題:	Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETs
作者:	Wang, J. -S. Chen, William P. N. Shih, C. -H. Lien, C. Su, Pin Sheu, Y. M. Chao, Donald Y. -S. Goto, K. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2007
URI:	http://hdl.handle.net/11536/135150
ISBN:	978-1-4244-0584-8
期刊:	2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS
起始頁:	158
結束頁:	+
顯示於類別：	會議論文