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dc.contributor.authorLee, CYen_US
dc.contributor.authorLi, SYen_US
dc.contributor.authorLin, Pen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:18:48Z-
dc.date.available2014-12-08T15:18:48Z-
dc.date.issued2005-07-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2005.164en_US
dc.identifier.urihttp://hdl.handle.net/11536/13515-
dc.description.abstractZinc oxide nanowires (ZnO NWs) were successfully synthesized on the]TO/PET polymer substrates by a hydrothermal method. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy investigations were carried out to characterize the crystallinity, surface morphologies, and orientations of these NWs, respectively, The influence of NW surface morphologies on the optical and electrical properties of ZnO NWs was studied, The hydrothermally grown ZnO NWs with direct band gap of 3.21 eV emitted ultraviolet photoluminescence of 406 nm at room temperature. Field emission measurements revealed that the threshold electric fields (E-th, current density of 1 mA/cm(2)) of ZnO NWs/ITO/PET and ZnO NWs/ZnO/ITO/PET are 1.6 and 2,2 V/mu m with the enhancement factors, beta values, of 3275 and 4502, respectively. Furthermore, the field emission performance of ZnO NWs deposited on the ITO/PET substrate can be enhanced by illumination with E-th of 1.3 V/mu m and displays a maximum emission current density of 18 mA/cm(2). The ZnO NWs successfully grown on polymer substrate with high transmittance, low threshold electric field, and high emission current density may be applied to a flexible field emission display in the future.en_US
dc.language.isoen_USen_US
dc.subjectZnOen_US
dc.subjectnanowiresen_US
dc.subjectpolymer substrateen_US
dc.subjecthydrothermal methoden_US
dc.subjectphotoluminescenceen_US
dc.subjectfield emissionen_US
dc.titleZnO nanowires hydrothermally grown on PET polymer substrates and their characteristicsen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2005.164en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume5en_US
dc.citation.issue7en_US
dc.citation.spage1088en_US
dc.citation.epage1094en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000230316300013-
dc.citation.woscount34-
Appears in Collections:Articles