標題: High temperature electrical properties of ultra thin Ta2O5 films on ZnO/n-Si heterolayrs
作者: Nandi, S. K.
Tiwari, Jitendra N.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2007
摘要: Ultrathin Ta2O5 films have been deposited oil ZnO/n-Si substrate by microwave plasma enhanced chemical vapor deposition technique. Using metal insulator semiconductor (MIS) capacitor structures, the capacitance-voltage and the leakage Current characteristics of Ta2O5 films have been investi-ated in the temperature range of 27-200 degrees C. Poole-Frenkel current conduction mechanism was found to be dominated at high temperature.
URI: http://hdl.handle.net/11536/135170
ISBN: 978-1-4244-1727-8
期刊: PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007
起始頁: 417
結束頁: +
Appears in Collections:Conferences Paper