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dc.contributor.authorChen, Y. Y.en_US
dc.contributor.authorLi, T. H.en_US
dc.contributor.authorKin, K. T.en_US
dc.contributor.authorChien, C. H.en_US
dc.contributor.authorLou, J. C.en_US
dc.date.accessioned2017-04-21T06:48:19Z-
dc.date.available2017-04-21T06:48:19Z-
dc.date.issued2006en_US
dc.identifier.isbn978-0-7803-9357-8en_US
dc.identifier.urihttp://dx.doi.org/10.1109/NANOEL.2006.1609772en_US
dc.identifier.urihttp://hdl.handle.net/11536/135193-
dc.description.abstractIn this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-kappa) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QRD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.en_US
dc.language.isoen_USen_US
dc.titleCharacterization of inter-poly high-kappa dielectrics for next generation stacked-gate flash memoriesen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/NANOEL.2006.1609772en_US
dc.identifier.journal2006 IEEE CONFERENCE ON EMERGING TECHNOLOGIES - NANOELECTRONICSen_US
dc.citation.spage463en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000245207000102en_US
dc.citation.woscount0en_US
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