完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Y. Y. | en_US |
dc.contributor.author | Li, T. H. | en_US |
dc.contributor.author | Kin, K. T. | en_US |
dc.contributor.author | Chien, C. H. | en_US |
dc.contributor.author | Lou, J. C. | en_US |
dc.date.accessioned | 2017-04-21T06:48:19Z | - |
dc.date.available | 2017-04-21T06:48:19Z | - |
dc.date.issued | 2006 | en_US |
dc.identifier.isbn | 978-0-7803-9357-8 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/NANOEL.2006.1609772 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/135193 | - |
dc.description.abstract | In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-kappa) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QRD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Characterization of inter-poly high-kappa dielectrics for next generation stacked-gate flash memories | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1109/NANOEL.2006.1609772 | en_US |
dc.identifier.journal | 2006 IEEE CONFERENCE ON EMERGING TECHNOLOGIES - NANOELECTRONICS | en_US |
dc.citation.spage | 463 | en_US |
dc.citation.epage | + | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000245207000102 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |