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dc.contributor.authorLin, M. H.en_US
dc.contributor.authorChang, K. P.en_US
dc.contributor.authorSu, K. C.en_US
dc.contributor.authorWang, Tahuien_US
dc.date.accessioned2017-04-21T06:48:16Z-
dc.date.available2017-04-21T06:48:16Z-
dc.date.issued2006en_US
dc.identifier.isbn0-7803-9498-4en_US
dc.identifier.issn1541-7026en_US
dc.identifier.urihttp://dx.doi.org/10.1109/RELPHY.2006.251317en_US
dc.identifier.urihttp://hdl.handle.net/11536/135206-
dc.language.isoen_USen_US
dc.titleEffects of width scaling, length scaling, and layout variation on electromigrationin in dual damascene copper interconnectsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/RELPHY.2006.251317en_US
dc.identifier.journal2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUALen_US
dc.citation.spage671en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000240855800132en_US
dc.citation.woscount2en_US
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