標題: | Effects of length scaling on electromigration in dual-damascene copper interconnects |
作者: | Lin, M. H. Lin, M. T. Wang, Tahui 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-四月-2008 |
摘要: | The electromigration short-length effect in dual-damascene Cu interconnects has been investigated through experiments on lines of various lengths (L), being stressed at a variety of current densities (j), and using a technologically realistic three-level structure. This investigation represents a complete study of the short-length effect after a well-developed dual-damascene Cu process. Lifetime measurement and resistance degradation as a function of time were used to describe this phenomenon. It has been found that the sigma of log-normal distribution increased as the current density-length product decreased. The statistical distribution of the critical volume fits the sigma curve well. Lower jL(2) values show large sigma values because of back-stress-induced TTF (time-to-fail) dispersion. A simplified equation is proposed to analyze the experimental data from various combinations of current density and line length at a certain temperature. The resulting threshold-length product (jL)(C) value appears to be temperature dependent, decreasing with an increase in temperature in a range of 250-300 degrees C. (c) 2007 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.microrel.2007.10.007 http://hdl.handle.net/11536/9492 |
ISSN: | 0026-2714 |
DOI: | 10.1016/j.microrel.2007.10.007 |
期刊: | MICROELECTRONICS RELIABILITY |
Volume: | 48 |
Issue: | 4 |
起始頁: | 569 |
結束頁: | 577 |
顯示於類別: | 期刊論文 |