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dc.contributor.authorYeh, C. C.en_US
dc.contributor.authorLiao, Y. Y.en_US
dc.contributor.authorWang, Tahuien_US
dc.contributor.authorTsai, W. J.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorKao, H. L.en_US
dc.contributor.authorOu, T. F.en_US
dc.contributor.authorChen, M. S.en_US
dc.contributor.authorChen, Y. K.en_US
dc.contributor.authorLai, E. K.en_US
dc.contributor.authorShih, Y. H.en_US
dc.contributor.authorTing, WenChien_US
dc.contributor.authorKu, Y. H. Josephen_US
dc.contributor.authorLit, Chih-Yuanen_US
dc.date.accessioned2017-04-21T06:48:15Z-
dc.date.available2017-04-21T06:48:15Z-
dc.date.issued2006en_US
dc.identifier.isbn0-7803-9498-4en_US
dc.identifier.issn1541-7026en_US
dc.identifier.urihttp://dx.doi.org/10.1109/RELPHY.2006.251327en_US
dc.identifier.urihttp://hdl.handle.net/11536/135207-
dc.description.abstractThe stress effect on the ONO stack layer in a two-bit SONOS-type memory cell is investigated. Our results show that P/E cycles induced stress will generate extra nitride, oxide, and interface traps in the ONO stack layer. Besides, these stress created traps are unstable and will be annealed by additional thermal treatment. Storage electrons escape from stress-created nitride and oxide traps and the trap annealing effects are root causes of charge loss in a SONOS cell.en_US
dc.language.isoen_USen_US
dc.titleInsight of stress effect on the ONO stack layer in a SONOS-type flash memory cellen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/RELPHY.2006.251327en_US
dc.identifier.journal2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUALen_US
dc.citation.spage691en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000240855800142en_US
dc.citation.woscount1en_US
Appears in Collections:Conferences Paper


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