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dc.contributor.authorWu, C. H.en_US
dc.contributor.authorHung, B. F.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorWang, S. J.en_US
dc.contributor.authorChen, W. J.en_US
dc.contributor.authorWang, X. P.en_US
dc.contributor.authorLi, M. -F.en_US
dc.contributor.authorZhu, C.en_US
dc.contributor.authorJin, Y.en_US
dc.contributor.authorTao, H. J.en_US
dc.contributor.authorChen, S. C.en_US
dc.contributor.authorLiang, M. S.en_US
dc.date.accessioned2017-04-21T06:48:24Z-
dc.date.available2017-04-21T06:48:24Z-
dc.date.issued2006en_US
dc.identifier.isbn978-1-4244-0438-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/135214-
dc.description.abstractWe report novel 1000 degrees C-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good phi(m.eff) of 5.08 and 4.24 eV, low V, of -0.10 and 0.18 V, high mobility of 84 and 217 cm(2)/Vs at 1.6 nm EOT, and small 850 degrees C BTI < 20 mV (10 MV/cm for 1 hr) are measured.en_US
dc.language.isoen_USen_US
dc.titleHigh temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function differenceen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2en_US
dc.citation.spage358en_US
dc.citation.epage+en_US
dc.contributor.department奈米科技中心zh_TW
dc.contributor.departmentCenter for Nanoscience and Technologyen_US
dc.identifier.wosnumberWOS:000247357700089en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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