High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference

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DC 欄位	值	語言
dc.contributor.author	Wu, C. H.	en_US
dc.contributor.author	Hung, B. F.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Wang, S. J.	en_US
dc.contributor.author	Chen, W. J.	en_US
dc.contributor.author	Wang, X. P.	en_US
dc.contributor.author	Li, M. -F.	en_US
dc.contributor.author	Zhu, C.	en_US
dc.contributor.author	Jin, Y.	en_US
dc.contributor.author	Tao, H. J.	en_US
dc.contributor.author	Chen, S. C.	en_US
dc.contributor.author	Liang, M. S.	en_US
dc.date.accessioned	2017-04-21T06:48:24Z	-
dc.date.available	2017-04-21T06:48:24Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	978-1-4244-0438-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135214	-
dc.description.abstract	We report novel 1000 degrees C-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good phi(m.eff) of 5.08 and 4.24 eV, low V, of -0.10 and 0.18 V, high mobility of 84 and 217 cm(2)/Vs at 1.6 nm EOT, and small 850 degrees C BTI < 20 mV (10 MV/cm for 1 hr) are measured.	en_US
dc.language.iso	en_US	en_US
dc.title	High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2	en_US
dc.citation.spage	358	en_US
dc.citation.epage	+	en_US
dc.contributor.department	奈米科技中心	zh_TW
dc.contributor.department	Center for Nanoscience and Technology	en_US
dc.identifier.wosnumber	WOS:000247357700089	en_US
dc.citation.woscount	0	en_US
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