Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress

標題:	Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress
作者:	Lee, Yao-Jen Fan, Chia-Hao Yang, Wen-Luh Lin, Wen-Yan Huang, Bohr-Ran Chao, Tien-Sheng Chuu, D. S. 物理研究所 Institute of Physics
公開日期:	2006
URI:	http://hdl.handle.net/11536/135232
ISBN:	1-4244-0205-0
期刊:	IPFA 2006: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS
起始頁:	88
結束頁:	+
Appears in Collections:	Conferences Paper