標題: Study of the internal quantum efficiency of InGaN/GaN UV LEDs on patterned sapphire substrate using the electroluminescence method
作者: Wang, C. H.
Ke, C. C.
Chiu, C. H.
Li, J. C.
Kuo, H. C.
Lu, T. C.
Wang, S. C.
光電工程學系
Department of Photonics
關鍵字: Substrates;Metalorganic chemical vapor deposition;Nitrides;Light emitting diodes
公開日期: 15-Jan-2011
摘要: Internal quantum efficiency (IQE) of InGaN/GaN UV LEDs with patterned sapphire substrates (PSS) was investigated using electroluminescence (EL) and photoluminescence (PL) methods. The physical mechanisms that affect temperature-dependent EL efficiency as a function of injected carrier density were deduced. In order to reduce the density of non-radiative recombination centers to improve quantum efficiency, improvement of crystal quality and reduction in the number of defects are necessary. PSS LEDs showed better EL characteristics than non-PSS LEDs because of the improved epitaxial quality. Contrary to PL IQE, EL IQE was significantly affected by carrier injection efficiency, especially at low temperature when high bias voltage was applied to the p-n junction. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.09.046
http://hdl.handle.net/11536/1352
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.09.046
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 315
Issue: 1
起始頁: 242
結束頁: 245
Appears in Collections:Conferences Paper


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