Low noise RF MOSFETs on flexible plastic substrates

doi:10.1109/LED.2005.851238

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kao, HL	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Hung, BF	en_US
dc.contributor.author	Lee, CF	en_US
dc.contributor.author	Lai, JM	en_US
dc.contributor.author	McAlister, SP	en_US
dc.contributor.author	Sarnudra, GS	en_US
dc.contributor.author	Yoo, WJ	en_US
dc.contributor.author	Chi, CC	en_US
dc.date.accessioned	2014-12-08T15:18:49Z	-
dc.date.available	2014-12-08T15:18:49Z	-
dc.date.issued	2005-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2005.851238	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13533	-
dc.description.abstract	We report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-mu m RF MOSFETs, after thinning down the Si substrate to 30 mu m and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-mu m node (L-g = 80 nm) devices.	en_US
dc.language.iso	en_US	en_US
dc.subject	associated gain	en_US
dc.subject	MOSFET	en_US
dc.subject	plastic	en_US
dc.subject	RF noise	en_US
dc.title	Low noise RF MOSFETs on flexible plastic substrates	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2005.851238	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	26	en_US
dc.citation.issue	7	en_US
dc.citation.spage	489	en_US
dc.citation.epage	491	en_US
dc.contributor.department	奈米科技中心	zh_TW
dc.contributor.department	Center for Nanoscience and Technology	en_US
dc.identifier.wosnumber	WOS:000230150400021	-
dc.citation.woscount	9	-
顯示於類別：	期刊論文

文件中的檔案：

000230150400021.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。