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dc.contributor.authorKao, HLen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorHung, BFen_US
dc.contributor.authorLee, CFen_US
dc.contributor.authorLai, JMen_US
dc.contributor.authorMcAlister, SPen_US
dc.contributor.authorSarnudra, GSen_US
dc.contributor.authorYoo, WJen_US
dc.contributor.authorChi, CCen_US
dc.date.accessioned2014-12-08T15:18:49Z-
dc.date.available2014-12-08T15:18:49Z-
dc.date.issued2005-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2005.851238en_US
dc.identifier.urihttp://hdl.handle.net/11536/13533-
dc.description.abstractWe report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-mu m RF MOSFETs, after thinning down the Si substrate to 30 mu m and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-mu m node (L-g = 80 nm) devices.en_US
dc.language.isoen_USen_US
dc.subjectassociated gainen_US
dc.subjectMOSFETen_US
dc.subjectplasticen_US
dc.subjectRF noiseen_US
dc.titleLow noise RF MOSFETs on flexible plastic substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2005.851238en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume26en_US
dc.citation.issue7en_US
dc.citation.spage489en_US
dc.citation.epage491en_US
dc.contributor.department奈米科技中心zh_TW
dc.contributor.departmentCenter for Nanoscience and Technologyen_US
dc.identifier.wosnumberWOS:000230150400021-
dc.citation.woscount9-
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