標題: Record-high 121/62 mu A/mu m on-currents 3D stacked epi-like Si FETs with and without metal back gate
作者: Yang, Chih-Chao
Chen, Szu-Hung
Shieh, Jia-Min
Huang, Wen-Hsien
Hsieh, Tung-Ying
Shen, Chang-Hong
Wu, Tsung-Ta
Wang, Hsing-Hsiang
Lee, Yao-Jen
Hou, Fu-Ju
Pan, Ci-Ling
Chang-Liao, Kuei-Shu
Hu, Chenming
Yang, Fu-Liang
光電工程學系
Department of Photonics
公開日期: 2013
摘要: A sequential layered integration technology that can fabricate 3D stackable epi-like Si FETs with and without metal back gate (MBG) under sub-400 degrees C are proposed in this article. With laser crystallized epi-like Si and CMP thinning processes for channel fabrication, 3D stackable ultra thin body (UTB) n/p-MOSFETs with low-subthreshold swings (88 and 121 mV/dec.) and high on-currents (121 and 62 liA/Iim) are demonstrated. With additional metal back gate structure, UTB devices can be desirably operated in a positive or negative threshold voltage range with gamma values of 0.51 (n-MOSFETs) and 0.56 (p-MOSFETs) for favoring its applications in 3D logic circuits. In addition, such thin and high quality channel and metal back gate scheme is not only promising for conventional p-n junction device but also junctionless (JL) scheme, which can simplify the fabrication and achieve further scaling.
URI: http://hdl.handle.net/11536/135419
ISBN: 978-1-4799-2306-9
期刊: 2013 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
Appears in Collections:Conferences Paper