Microwave Annealing

doi:10.1063/1.4766505

標題:	Microwave Annealing
作者:	Lee, Yao-Jen Cho, T. -C. Chuang, S. -S. Hsueh, F. -K. Lu, Y. -L. Sung, J. Chen, S. -J. Lo, C. -H. Lai, C. -H. Current, Michael I. Tseng, T. -Y. Chao, T. -S. Yang, F. -L. 電子物理學系電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics
關鍵字:	microwave;MWA;low temperature;SPEG;dopant activation
公開日期:	2012
摘要:	Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However the details of the kinetics and mechanisms for microwave annealing are far from well understood. Comparisons between MWA and RTA of dopants in implanted Si has been investigated to produce highly activated junctions. First, As, P-31, and BF2 implants in Si substrate were annealed by MWA at temperatures below 550 degrees C.
URI:	http://dx.doi.org/10.1063/1.4766505 http://hdl.handle.net/11536/135485
ISBN:	978-0-7354-1109-8
ISSN:	0094-243X
DOI:	10.1063/1.4766505
期刊:	ION IMPLANTATION TECHNOLOGY 2012
Volume:	1496
起始頁:	123
結束頁:	128
顯示於類別：	會議論文