標題: Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility
作者: Fan, Yang-Shun
Hsu, Ching-Hui
Chang, Chih-Hsiang
Huang, Wei-Hsun
Yu, Ming-Chang
Liu, Po-Tsun
光電工程學系
Department of Photonics
關鍵字: Flexible;Non-volatile Memory;RRAM;IGZO;Reliability
公開日期: 2012
摘要: The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10(4) pulse endurance, 10(4)s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications.
URI: http://hdl.handle.net/11536/135498
ISSN: 1883-2490
期刊: IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, VOL 19
Volume: 19
起始頁: 783
結束頁: 784
顯示於類別:會議論文