標題: Reverse-bias Electroluminescence Observation for Reliability Investigations of the InGaN LED
作者: Chen, Hsiang
Lu, Tien-Chang
交大名義發表
National Chiao Tung University
公開日期: 2010
摘要: The reverse-bias operation of the InGaN LED device can shed a light on device reliability problems. Our goal is to use noninvasive optical characterization techniques including surface temperature measurements, 2D XRF( X-ray fluorescent) element analysis, and 2D electroluminescence measurements to visualize the leakage current distribution and examine the origin of the reverse-bias leakage current. The origin of the reverse-bias emission is attributed to imperfect metal contact caused by process variation. Hot electron induced emission due to the leakage current should be the mechanism of the reverse-bias emission from the surface defect and the imperfect contact. The light emission was proved to be relevant to reliability problems in terms of the leakage current.
URI: http://dx.doi.org/10.1149/1.3360625
http://hdl.handle.net/11536/135567
ISBN: 978-1-60768-156-4
ISSN: 1938-5862
DOI: 10.1149/1.3360625
期刊: CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010)
Volume: 27
Issue: 1
起始頁: 237
結束頁: 242
Appears in Collections:Conferences Paper