The polarity bias control of Indium Zinc Oxide Thin Film Transistor for gas sensor application

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Teng, Li-fang	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Chou, Yi-Teh	en_US
dc.contributor.author	Fan, Yang-Shun	en_US
dc.date.accessioned	2017-04-21T06:48:36Z	-
dc.date.available	2017-04-21T06:48:36Z	-
dc.date.issued	2010	en_US
dc.identifier.issn	1883-2490	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135573	-
dc.description.abstract	An obvious Vth shift was observed after gate-bias stress and recovered. This metastability was attributed to the interaction between the exposed a-IZO backchannel and oxygen/moisture from the atmosphere, regardless of the polarity of stress voltage. This water/moisture sensitivity characteristic can be used for gas sensor application.	en_US
dc.language.iso	en_US	en_US
dc.title	The polarity bias control of Indium Zinc Oxide Thin Film Transistor for gas sensor application	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3	en_US
dc.citation.spage	253	en_US
dc.citation.epage	255	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000393718700071	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文