標題: The Path Finding of Gate Dielectric Breakdown in Advanced High-k Metal-Gate CMOS Devices
作者: Chung, Steve
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Leakage path;high-k;BTI;soft-breakdown;hard breakdown;TDDB lifetime
公開日期: 2015
摘要: The breakdown path induced by BTI stress in a MOSFET device can he traced from the experiment. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path, i.e., from the leakage by measuring the Ig current as a function of time, It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths will be presented. The soft-breakdown path is in a shape like spindle, while the hard breakdown behaves like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.
URI: http://hdl.handle.net/11536/135769
ISBN: 978-1-4799-8364-3
期刊: PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
起始頁: 360
結束頁: 364
Appears in Collections:Conferences Paper