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dc.contributor.authorSu, KWen_US
dc.contributor.authorLai, HCen_US
dc.contributor.authorLi, Aen_US
dc.contributor.authorChen, YFen_US
dc.contributor.authorHuang, KEen_US
dc.date.accessioned2014-12-08T15:18:52Z-
dc.date.available2014-12-08T15:18:52Z-
dc.date.issued2005-06-15en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.30.001482en_US
dc.identifier.urihttp://hdl.handle.net/11536/13580-
dc.description.abstractWe report that lnAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained. (c) 2005 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleInAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd : YVO4 laser at 1342 nmen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.30.001482en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume30en_US
dc.citation.issue12en_US
dc.citation.spage1482en_US
dc.citation.epage1484en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000229689400018-
dc.citation.woscount18-
Appears in Collections:Articles


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